Datasheet > 2SK2968_02

2SK2968_02

更新时间： 2024-11-15 07:32:27

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器转换器继电器电机 DC-DC转换器
页数	文件大小	规格书
6页	252K
描述
DC−DC Converter, Relay Drive and Motor Drive Applications

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中文翻译

获取价格

数据手册

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2SK2968_02 数据手册

2SK2968

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

2SK2968

DC−DC Converter, Relay Drive and Motor Drive

Unit: mm

Applications

l Low drain−source ON resistance

l High forward transfer admittance

: R = 1.05 Ω (typ.)

DS (ON)

: |Y | = 7.6 S (typ.)

l Low leakage current : I

l Enhancement−mode : V = 2.0~4.0 V (V

= 100 µA (max) (V = 720 V)

DSS

= 10 V, I = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

900

900ꢀ

±30

DSS

Drain−gate voltage (R

= 20 kΩ)

DGR

Gate−source voltage

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

1. GATE

2. DRAIN (HEAT SINK)

3. SOURCE

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

150

810

(Note 2)

JEDEC

JEITA

―

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

2-16C1B

150

Storage temperature range

−55~150

stg

Weight: 4.6 g (typ.)

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

0.833

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: V = 90 V, T = 25°C (initial), L = 14.9 mH, R = 25 Ω, I = 10 A

DD ch

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device.

Please handle with caution.

2002-07-31

12 3 4 5 6

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