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2SK2975 PDF预览

2SK2975

更新时间: 2024-11-14 22:52:55
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体放大器射频场效应晶体管功率放大器
页数 文件大小 规格书
3页 33K
描述
RF POWER MOS FET(VHF/UHF power amplifiers)

2SK2975 技术参数

生命周期:Obsolete包装说明:CHIP CARRIER, R-CXCC-N3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
Is Samacsys:N外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:30 V
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-CXCC-N3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
极性/信道类型:N-CHANNEL认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:NO LEAD端子位置:UNSPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2SK2975 数据手册

 浏览型号2SK2975的Datasheet PDF文件第2页浏览型号2SK2975的Datasheet PDF文件第3页 
MITSUBISHI RF POWER MOS FET  
2SK2975  
DESCRIPTION  
2SK2975 is a MOS FET type transistor specifically designed for  
Dimensions in mm  
OUTLINE DRAWING  
VHF/UHF power amplifiers applications.  
INDEX MARK  
(TOP)  
(BOTTOM)  
FEATURES  
• High power gain:Gpe³ 8.4dB  
@VDD=9.6V,f=450MHz,Pin=30dBm  
• High efficiency:55% typ.  
• Source case type seramic package  
(connected internally to source)  
2.0  
4.9  
2
3
1
t=1.2MAX  
3.50  
APPLICATION  
For drive stage and output stage of power amplifiers in VHF/UHF  
band portable radio sets.  
1 : DRAIN  
2 : SOURCE  
3 : GATE  
MARKING  
INDEX  
MARK  
TYPE No.  
LOT No.  
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)  
Ratings  
Parameter  
Drain to source voltage  
Gate to source voltage  
Channel dissipation  
Junction temperature  
Storage temperature  
Conditions  
Unit  
V
Symbol  
VDSS  
VGSS  
Pch  
30  
±20  
V
Tc=25˚C  
(Note2)  
10  
W
˚C  
˚C  
Tj  
175  
Tstg  
-40 to +110  
Note1: Above parameters are guaranteed independently.  
2: Solder source pad on Copper Block(14´ 2.8´ 2mm)  
ELECTRICAL CHARACTERISTICS (TC=25˚C, unless otherwise noted)  
Limits  
Typ  
Symbol  
Parameter  
Test conditions  
Unit  
Min  
1.0  
Max  
10  
1
µA  
µA  
VDS=17V, VGS=0V  
VGS=10V, VDS=0V  
VDS=7V, IDS=1mA  
IDSS  
IGSS  
VTH  
Ciss  
Coss  
1.7  
Threshold voltage  
V
pF  
pF  
45  
80  
8
VGS=10V, VDS=0V,f=1MHz  
VDS=10V, VGS=0V,f=1MHz  
Pout  
hD  
7
W
%
VDS=9.6V, Pin=1W,f=450MHz  
50  
55  
Note: Above parameters,ratings,limits and conditions are subject to change.  
Nov. ´97  

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