Datasheet > 2SK2981-Z

2SK2981-Z

更新时间： 2024-02-16 06:09:47

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
8页	61K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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技术参数
数据手册

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2SK2981-Z 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.84	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	30 V
最大漏极电流 (ID)：	20 A	最大漏源导通电阻：	0.05 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-252
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	80 A	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2SK2981-Z 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2981

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

PACKAGE DRAWING (Unit : mm)

FEATURES

• Low on-resistance

DS(on)1

2.3 ±0.2

0.5 ±0.1

6.5 ±0.2

5.0 ±0.2

= 27 mΩ (MAX.) (V = 10 V, I = 10 A)

DS(on)2

DS(on)3

= 40 mΩ (MAX.) (V = 4.5 V, I = 10 A)

2 3

= 50 mΩ (MAX.) (V = 4 V, I = 10 A)

1.3 MAX.

iss

• Low C : C = 860 pF (TYP.)

• Built-in gate protection diode

0.6 ±0.1

2.3 2.3

1. Gate

2. Drain

3. Source

4. Fin (Drain)

ORDERING INFORMATION

PART NUMBER

2SK2981

PACKAGE

TO-251

TO-251(MP-3)

2.3 ±0.2

6.5 ±0.2

5.0 ±0.2

0.5 ±0.1

2SK2981-Z

TO-252

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

0.9 0.8

MAX. MAX.

1.3 MAX.

2.3 2.3

DSS

Drain to Source Voltage (V = 0)

±20

±80

0.8

1. Gate

2. Drain

3. Source

4. Fin (Drain)

GSS

Gate to Source Voltage (V = 0)

D(DC)

Drain Current (DC)

Drain Current (Pulse) ^Note

TO-252(MP-3Z) (SURFACE MOUNT TYPE)

D(pulse)

Total Power Dissipation (T = 25 °C)

°C

EQUIVALENT CIRCUIT

Channel Temperature

Storage Temperature

150

Drain

stg

–55 to + 150 °C

Body

Diode

Gate

Note PW ≤ 10 µs, Duty cycle ≤ 1 %

Gate

Protection

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice.

Document No.

D12355EJ1V0DS00 (1st edition)

Date Published December 1998 NS CP(K)

Printed in Japan

1998

12 3 4 5 6 7 8

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