Datasheet > 2SK2989(TPE6,F)

2SK2989(TPE6,F)

更新时间： 2024-02-12 18:42:01

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	236K
描述
TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,5A I(D),TO-92VAR

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技术参数
数据手册

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2SK2989(TPE6,F) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.9 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

2SK2989(TPE6,F) 数据手册

2SK2989

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)

2SK2989

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 120 mΩ (typ.)

DS (ON)

: |Y | = 2.6 S (typ.)

z Low leakage current : I

= 100 μA (max) (V

= 50 V)

DSS

z Enhancement−mode : V = 1.0 to 2.2 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

±20

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

JEDEC

JEITA

TO-92MOD

—

Drain power dissipation

Channel temperature

0.9

°C

stg

TOSHIBA

2-5J1C

150

Storage temperature range

−55 to 150

Weight: 0.36 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

138

Unit

Thermal resistance, channel to ambient

°C / W

th (ch−a)

Note 1: Please use devices on condition that the channel temperature is below 150°C.

This transistor is an electrostatic sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

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