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2SK2992_09 PDF预览

2SK2992_09

更新时间: 2022-09-18 12:05:34
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动器转换器稳压器电机DC-DC转换器
页数 文件大小 规格书
6页 397K
描述
Chopper Regulator, DC−DC Converter and Motor Drive

2SK2992_09 数据手册

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2SK2992  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)  
2SK2992  
Chopper Regulator, DCDC Converter and Motor Drive  
Applications  
Unit: mm  
z Low drainsource ON resistance  
z High forward transfer admittance  
: R  
= 2.2 (typ.)  
DS (ON)  
: |Y | = 0.9 S (typ.)  
fs  
z Low leakage current : I  
= 100 μA (max) (V  
= 200 V)  
DSS  
DS  
z Enhancement mode : V = 2.0 to 3.5 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
200  
200  
±20  
1
V
V
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
GS  
DGR  
V
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
A
D
Drain current  
I
3
A
DP  
Drain power dissipation  
Drain power dissipation  
P
0.5  
1.5  
W
W
D
D
(Note 2)  
P
JEDEC  
JEITA  
Single pulse avalanche energy  
(Note 3)  
E
I
36  
mJ  
AS  
SC-62  
2-5K1B  
Avalanche current  
1
0.05  
A
AR  
TOSHIBA  
Repetitive avalanche energy (Note 4)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 0.05 g (typ.)  
T
ch  
150  
Storage temperature range  
T
55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
250  
Unit  
Thermal resistance, channel to ambient  
R
°C / W  
th (cha)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)  
Note 3:  
V
DD  
= 50 V, T = 25°C (initial), L = 56.7 mH, R = 25 , I  
= 1 A  
AR  
ch  
G
Note 4: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2009-09-29  

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