2SK2993(SM)

更新时间： 2024-01-03 22:55:31

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体转换器稳压器晶体管功率场效应晶体管电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	466K
描述
TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,20A I(D),TO-263ABVAR

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中文翻译

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技术参数
数据手册

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2SK2993(SM) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	20 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	100 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

2SK2993(SM) 数据手册

2SK2993

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2993

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 82 mΩ (typ.)

DS (ON)

: |Y | = 20 S (typ.)

z Low leakage current : I

= 100 μA (max) (V

= 250 V)

DSS

z Enhancement mode : V = 1.5 to 3.5 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

250

±20

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

100

JEDEC

JEITA

―

423

(Note 2)

TOSHIBA

2-10S1B

Avalanche current

Weight: 1.5 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may

cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the

absolute maximum ratings. Please design the appropriate reliability upon

reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.25

83.3

°C / W

th (ch−c)

JEDEC

JEITA

―

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V = 90 V, T = 25°C (initial), L = 1.79 mH, I = 20 A, R = 25 Ω

TOSHIBA

2-10S2B

Weight: 1.5 g (typ.)

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

中文翻译

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