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2SK2995(F)

更新时间: 2024-09-24 13:02:47
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体转换器稳压器晶体管功率场效应晶体管脉冲电机驱动DC-DC转换器斩波器局域网
页数 文件大小 规格书
6页 415K
描述
MOSFET N-CH 250V 30A 2-16F1B

2SK2995(F) 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.71
Base Number Matches:1

2SK2995(F) 数据手册

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2SK2995  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)  
2SK2995  
Chopper Regulator, DCDC Converter and Motor Drive  
Applications  
Unit: mm  
z Low drainsource ON resistance  
z High forward transfer admittance  
: R  
= 48 m(typ.)  
DS (ON)  
: |Y | = 30 S (typ.)  
fs  
z Low leakage current  
z Enhancement mode  
: I  
= 100 μA (max) (V  
= 250 V)  
DSS  
DS  
: V = 1.5 to 3.5 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
250  
250  
±20  
30  
V
V
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
GS  
DGR  
V
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
A
D
Drain current  
I
120  
90  
A
DP  
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
JEDEC  
JEITA  
Single pulse avalanche energy  
E
925  
mJ  
(Note 2)  
TOSHIBA  
2-16F1B  
Avalanche current  
I
30  
9
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
Weight: 1.9 g (typ.)  
AR  
T
ch  
150  
Storage temperature range  
T
55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
1.39  
41.6  
°C / W  
°C / W  
th (chc)  
R
th (cha)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 50 V, T = 25°C (initial), L = 1.74 mH, I = 30 A, R = 25 Ω  
V
DD  
ch  
AR  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2009-09-29  

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