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2SK2991_09 PDF预览

2SK2991_09

更新时间: 2022-09-18 12:06:38
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动器转换器继电器电机DC-DC转换器
页数 文件大小 规格书
6页 436K
描述
DC−DC Converter Relay Drive and Motor Drive Applications

2SK2991_09 数据手册

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2SK2991  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)  
2SK2991  
DCDC Converter Relay Drive and Motor Drive  
Applications  
Unit: mm  
z Low drainsource ON resistance  
z High forward transfer admittance  
: R  
= 1.35 (typ.)  
DS (ON)  
: |Y | = 4.0 S (typ.)  
fs  
z Low leakage current : I  
= 100 μA (max) (V  
= 500 V)  
DSS  
DS  
z Enhancement mode : V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
500  
500  
±30  
5
V
V
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
GS  
DGR  
V
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
A
D
Drain current  
I
20  
A
DP  
Drain power dissipation (Tc = 25°C)  
Single pulse avalanche energy  
P
50  
W
D
AS  
AR  
JEDEC  
JEITA  
E
180  
mJ  
(Note 2)  
Avalanche current  
I
5
4
A
TOSHIBA  
2-10S1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 1.5 g (typ.)  
T
ch  
150  
Storage temperature range  
T
55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage,  
etc.) are within the absolute maximum ratings. Please design the  
appropriate reliability upon reviewing the Toshiba Semiconductor  
Reliability Handbook (“Handling Precautions”/“Derating Concept and  
Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
2.5  
°C / W  
°C / W  
th (chc)  
R
83.3  
th (cha)  
JEDEC  
JEITA  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 12.2 mH, R = 25 ,  
V
DD  
ch  
G
TOSHIBA  
2-10S2B  
I
= 5 A  
AR  
Weight: 1.5 g (typ.)  
Note 3: Repetitive rating: pulse width limited by maximum channel  
temperature  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2009-09-29  

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