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2SK2983-S PDF预览

2SK2983-S

更新时间: 2024-11-12 22:52:55
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 67K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK2983-S 技术参数

生命周期:Obsolete零件包装代码:TO-262
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):30 A最大漏源导通电阻:0.027 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):120 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK2983-S 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2983  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
This product is N-Channel MOS Field Effect Transistor designed for high current switching application.  
FEATURES  
Low on-resistance  
DS(on)1  
DS(on)2  
iss  
GS  
D
R
= 20 mΩ (MAX.) (V = 10 V, I = 15 A)  
GS  
D
R
= 27 mΩ (MAX.) (V = 4.5 V, I = 15 A)  
iss  
C
Low C  
= 1200 pF TYP.  
Built-in gate protection diode  
ORDERING INFOMATION  
PART NUMBER  
2SK2983  
PACKAGE  
TO-220AB  
TO-262  
2SK2983-S  
2SK2983-ZJ  
TO-263  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Drain to Source VoltageNote1  
Gate to Source VoltageNote2  
Drain Current (DC)  
DSS  
V
V
30  
±20  
V
V
GSS  
D(DC)  
I
±30  
A
Drain Current (pulse)Note3  
D(pulse)  
I
±120  
1.5  
A
A
T
P
Total Power Dissipation (T = 25°C)  
W
W
°C  
°C  
C
T
P
Total Power Dissipation (T = 25°C)  
50  
ch  
T
Channel Temperature  
Storage Temperature  
150  
stg  
T
55 to +150  
Notes1. VGS = 0 V  
2. VDS = 0 V  
3. PW 10 µ s, Duty Cycle 1 %  
.
The information in this document is subject to change without notice.  
Document No. D12357EJ1V0DS00 (1st edition)  
Date Published October 1998 NS CP (K)  
Printed in Japan  
1998  
©

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