Datasheet > 2SK2988

2SK2988

更新时间： 2024-11-12 23:20:39

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管
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1页	24K
描述

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中文翻译

获取价格

数据手册

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2SK2988 数据手册

Silicon Junction FETs (Small Signal)

2SK2988

Silicon N-Channel Junction FET

For impedance conversion in low frequency

For pyroelectric sensor

unit: mm

1.6±0.15

0.8±0.1

0.4

■ Features

● Low noise-figure (NF)

● High gate to drain voltage V_GDO

● SS-mini type package, allowing downsizing of the sets and auto-

matic insertion through the tape/magazine packing.

■ Absolute Maximum Ratings (Ta = 25 ± 3°C)

0.2±0.1

Parameter

Gate to Drain voltage

Drain current

Symbol

V_GDS

I_D

Ratings

Unit

−40

1: Source

2: Drain

3: Gate

EIAJ: SC-75

SS-Mini Type Package (3-pin)

°C

Gate current

I_G

125

Marking Symbol: HS

Allowable power dissipation

Channel temperature

Storage temperature

P_D

T_ch

125

T_stg

−55 to +150

°C

■ Electrical Characteristics (Ta = 25 ± 3°C)

Parameter

Symbol

I_DSS

Conditions

min

typ

max

4.7

Unit

Drain to Source cut-off current

Gate to Source leakage current

Gate to Drain voltage

V_DS= 10V, V_GS= 0

1.4

I_GSS

V_GS= −20V, V_DS= 0

−1

V_GDS

V_GSC

| Y_fs|

I_G= −100µA, V_DS= 0

V_DS= 10V, I_D= 1µA

−40

Gate to Source cut-off voltage

Forward transfer admittance

−3.5

V_DS= 10V, I_D= 1µA, f = 1kHz

2.5

Input capacitance (Common Source) C_iss

Output capacitance (Common Source) C_oss

Reverse transfer capacitance (Common Source) C_rss

V_DS= 10V, V_GS= 0, f = 1MHz

Note: The test method to comply with JISC7030, Field effect transistor test method.

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