2SK2983

更新时间： 2024-01-10 17:22:23

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
8页	67K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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2SK2983 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2983

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor designed for high current switching application.

FEATURES

• Low on-resistance

DS(on)1

DS(on)2

iss

= 20 mΩ (MAX.) (V = 10 V, I = 15 A)

= 27 mΩ (MAX.) (V = 4.5 V, I = 15 A)

iss

• Low C

= 1200 pF TYP.

• Built-in gate protection diode

ORDERING INFOMATION

PART NUMBER

2SK2983

PACKAGE

TO-220AB

TO-262

2SK2983-S

2SK2983-ZJ

TO-263

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

Drain to Source Voltage^Note1

Gate to Source Voltage^Note2

Drain Current (DC)

DSS

±20

GSS

D(DC)

±30

Drain Current (pulse)^Note3

D(pulse)

±120

1.5

Total Power Dissipation (T = 25°C)

°C

Total Power Dissipation (T = 25°C)

Channel Temperature

Storage Temperature

150

stg

−55 to +150

Notes1. V^GS= 0 V

2. V^DS= 0 V

3. PW ≤ 10 µ s, Duty Cycle ≤ 1 %

The information in this document is subject to change without notice.

Document No. D12357EJ1V0DS00 (1st edition)

Date Published October 1998 NS CP (K)

Printed in Japan

1998

12 3 4 5 6 7 8

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2SK2984-S	NEC	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	获取价格