2SK2983

更新时间： 2024-01-17 01:20:15

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
8页	67K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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数据手册

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2SK2983 数据手册

2SK2983

ELECTRICAL CHARACTERISTICS (T^A= 25 °C)

CHARACTERISTICS

SYMBOL

R^DS(on)1

R^DS(on)2

V^GS(off)

| y^fs|

I^DSS

TEST CONDITIONS

V^GS= 10 V, I^D= 15 A

MIN. TYP. MAX. UNIT

Drain to Source On-state Resistance

13.0

18.0

1.5

20.0

27.0

2.0

mΩ

V^GS= 4.5 V, I^D= 15 A

V^DS= 10 V, I^D= 1 mA

V^DS= 10 V, I^D= 15 A

V^DS= 30 V, V^GS= 0 V

V^GS= ±20 V, V^DS= 0 V

Gate to Source Cut-off Voltage

Forward Transfer Admittance

Drain Leakage Current

Gate to Source Leakage Current

Input Capacitance

1.0

9.0

µ A

I^GSS

±10

C^iss

V^DS= 10 V

V^GS= 0 V

f = 1 MHz

1200

530

250

Output Capacitance

C^oss

Reverse Transfer Capacitance

Turn-on Delay Time

C^rss

t^d(on)

I^D= 15 A

V^GS(on)= 10 V

V^DD= 15 V

R^G= 10 Ω

Rise Time

t^r

820

100

170

Turn-off Delay Time

t^d(off)

t^f

Fall Time

Total Gate Charge

Q^G

I^D= 30 A

V^DD= 24 V

V^GS= 10 V

Gate to Source Charge

Gate to Drain Charge

Body Diode Forward Voltage

Q^GS

4.5

Q^GD

7.5

V^F(S-D)

I^F= 30 A, V^GS= 0 V

0.8

Reverse Recovery Time

Reverse Recovery Charge

t^rr

I^F= 30 A, V^GS= 0 V

di/dt = 100 A /µS

Q^rr

TEST CIRCUIT 1 SWITCHING TIME

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

IG = 2 mA

VGS

R^L

90 %

V^GS

V^GS(on)

10 %

Wave Form

RG = 10 Ω

PG.

VDD

50 Ω

90 %

I^D

V^GS

10 %

Wave Form

td(on)

td(off)

ton

toff

τ = 1µ s

Duty Cycle ≤ 1 %

123 4 5 6 7 8

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