2SK2983

更新时间： 2024-01-02 18:45:11

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
8页	67K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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数据手册

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2SK2983 数据手册

2SK2983

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1 000

100

Rth(ch-a) = 83.3˚C/W

Rth(ch-c) = 2.5˚C/W

0.1

0.01

Single Pulse

T^C= 25˚C

0.001

100

1 m

10 m

100 m

100

1 000

PW - Pulse Width - s

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

1000

100

Pulsed

VDS =10 V

Pulsed

I =15 A

7.5 A

3 A

Tc = -25˚C

25˚C

75˚C

125˚C

100

1000

I^D- Drain Current - A

VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE

RESISTANCE vs. DRAIN CURRENT

GATE TO SOURCE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

Pulsed

DS = 10 V

= 1 mA

2.0

1.5

1.0

GS = 4.5 V

10 V

0.5

ID - Drain Current - A

100

- 50

100

150

ch - Channel Temperature - ˚C

1 2 345 6 7 8

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