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2SK2982 PDF预览

2SK2982

更新时间: 2024-02-23 22:25:55
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 741K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 30A I(D) | TO-251AA

2SK2982 技术参数

生命周期:Obsolete零件包装代码:TO-252AA
包装说明:TO-252, MP-3Z, 3 PIN针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):30 A最大漏极电流 (ID):30 A
最大漏源导通电阻:0.019 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK2982 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2982  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
The 2SK2982 is N-channel MOS Field Effect Transistor designed for high current switching applications.  
FEATURES  
Low on-resistance  
RDS(on)1 = 12.5 mMAX. (VGS = 10 V, ID = 15 A)  
RDS(on)2 = 16.5 mMAX. (VGS = 4.5 V, ID = 15 A)  
RDS(on)3 = 19.0 mMAX. (VGS = 4.0 V, ID = 15 A)  
Low Ciss : Ciss = 2290 pF TYP.  
Built-in gate protection diode  
ORDERING INFORMATION  
PART NUMBER  
(TO-251)  
PACKAGE  
TO-251  
2SK2982  
2SK2982-Z  
TO-252  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
30  
V
V
(TO-252)  
20  
30  
120  
A
Drain Current (Pulse) Note  
A
Total Power Dissipation (TA = 25°C)  
Total Power Dissipation (TC = 25°C)  
Channel Temperature  
1.0  
W
W
°C  
°C  
PT  
30  
Tch  
150  
Storage Temperature  
Tstg  
–55 to + 150  
Note PW 10 µs, Duty cycle 1%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published May 2001 NS CP(K)  
Printed in Japan  
D12354EJ3V0DS00 (3rd edition)  
1998  
©
The mark # shows major revised points.  

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