是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SC-59A | 包装说明: | LEAD FREE, SC-59A, MPAK-3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.65 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 1 A |
最大漏极电流 (ID): | 1 A | 最大漏源导通电阻: | 0.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e6 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.8 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | TIN BISMUTH | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SK2980TL | HITACHI | Power Field-Effect Transistor, 1A I(D), 30V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal- |
获取价格 |
|
2SK2980TR | HITACHI | Power Field-Effect Transistor, 1A I(D), 30V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal- |
获取价格 |
|
2SK2980UR | HITACHI | 1A, 30V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET |
获取价格 |
|
2SK2980ZZ-TL-E | RENESAS | Silicon N Channel MOS FET High Speed Power Switching |
获取价格 |
|
2SK2980ZZ-TR-E | RENESAS | Silicon N Channel MOS FET High Speed Power Switching |
获取价格 |
|
2SK2981 | NEC | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
获取价格 |