Datasheet > 2SK2968_06

2SK2968_06

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器转换器继电器电机 DC-DC转换器
页数	文件大小	规格书
6页	693K
描述
Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK2968_06 数据手册

2SK2968

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

2SK2968

DC−DC Converter, Relay Drive and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 1.05 Ω (typ.)

DS (ON)

: |Y | = 7.6 S (typ.)

z Low leakage current : I

= 100 μA (max) (V

= 720 V)

DSS

z Enhancement mode : V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

900

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

1. GATE

Drain current

2. DRAIN (HEAT SINK)

3. SOURCE

Drain power dissipation (Tc = 25°C)

150

Single pulse avalanche energy

810

JEDEC

JEITA

―

(Note 2)

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

2-16C1B

150

Weight: 4.6 g (typ.)

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

0.833

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 14.9 mH, R = 25 Ω, I

= 10 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-10

12 3 4 5 6

下载PDF

与2SK2968_06相关器件

型号	品牌	描述	获取价格	数据表
2SK2968_09	TOSHIBA	DC−DC Converter, Relay Drive and Motor Drive Applications	获取价格
2SK2969	SANYO	Ultrahigh-Speed Switching Applications	获取价格
2SK2970	ETC	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 13A I(D) \| SMT	获取价格
2SK2972	TOSHIBA	HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS	获取价格
2SK2973	MITSUBISHI	RF POWER MOS FET(VHF/UHF power amplifiers)	获取价格
2SK2974	MITSUBISHI	RF POWER MOS FET(VHF/UHF power amplifiers)	获取价格