2SK2845
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSIII)
2SK2845
Unit: mm
Chopper Regulator, DC/DC Converter and Motor Drive
6.8 MAX.
Applications
5.2 ± 0.2
0.6 MAX.
z Low drain-source ON-resistance
z High forward transfer admittance
: R
= 8.0 Ω (typ.)
DS (ON)
: |Y | = 0.9 S (typ.)
fs
z Low leakage current : I
= 100 μA (max) (V
= 720 V)
DSS
DS
z Enhancement mode : V = 2.0 to 4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
0.95 MAX.
0.6 ± 0.15
Absolute Maximum Ratings (Ta = 25°C)
0.6 MAX.
Characteristic
Drain-source voltage
Symbol
Rating
Unit
2.3 2.3
V
900
900
±30
1
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
1
2
3
2
V
GSS
1. GATE
2. DRAIN
(HEAT SINK)
3. SOURSE
1
DC (Note 1)
I
D
Drain current
A
3
Pulse (Note 1)
I
3
DP
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
P
40
W
D
AS
AR
JEDEC
―
JEITA
SC-64
2-7B5B
E
324
mJ
(Note 2)
TOSHIBA
Avalanche current
I
1
4.0
A
Weight: 0.36 g (typ.)
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
T
150
ch
6.8 MAX.
5.2 ± 0.2
Storage temperature range
−55 to 150
0.6 MAX.
stg
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
0.6 ± 0.15
0.95 MAX.
0.6 ± 0.15
0.6 MAX.
2.3
2.3
1
2
3
2.3 2.3
Thermal Characteristics
2
3
1. GATE
2. DRAIN
(HEAT SINK)
3. SOURSE
1
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
3.125
125
°C / W
°C / W
th (ch−c)
R
th (ch−a)
JEDEC
―
―
JEITA
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 90 V, T = 25°C (initial), L = 594 mH, R = 25 Ω, I
V
DD
= 1 A
AR
ch
G
TOSHIBA
2-7B7B
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
Weight: 0.36 g (typ.)
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-07-13