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2SK2848_05 PDF预览

2SK2848_05

更新时间: 2024-02-03 14:52:25
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三垦 - SANKEN /
页数 文件大小 规格书
2页 48K
描述
MOSFET

2SK2848_05 数据手册

 浏览型号2SK2848_05的Datasheet PDF文件第2页 
2SK2848  
Absolute Maximum Ratings  
External dimensions  
1 ...... FM20  
Electrical Characteristics  
(Ta = 25ºC)  
(Ta = 25ºC)  
Ratings  
typ  
Symbol  
Ratings  
Unit  
Symbol  
Unit  
Conditions  
min  
600  
max  
V
V
nA  
µA  
V
ID  
=
100µA, VGS  
=
0V  
0V  
(BR) DSS  
VDSS  
VGSS  
ID  
600  
V
V
IGSS  
±
100  
100  
4.0  
VGS = ±30V  
±30  
IDSS  
VDS  
VDS  
VDS  
VGS  
=
=
=
=
600V, VGS =  
±2  
A
VTH  
2.0  
1.2  
3.0  
1.7  
3.0  
290  
70  
10V, ID  
20V, ID  
10V, ID  
=
=
=
250µA  
1A  
1
ID (pulse)  
±8  
A
*
Re (yfs)  
RDS (on)  
Ciss  
S
3.8  
1A  
PD  
30 (Tc = 25ºC)  
W
mJ  
A
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
2
EAS  
IAS  
10  
*
VDS  
VGS  
=
=
10V, f  
0V  
= 1.0MHz,  
Coss  
Crss  
td (on)  
tr  
2
150  
30  
Tch  
Tstg  
ºC  
ºC  
16  
ID = 1A, VDD 250V,  
RL = 250, VGS = 10V,  
See Figure 2 on Page 5.  
30  
55 to +150  
td (off)  
tf  
45  
1: P  
100µs, duty cycle 1%  
W
*
145  
0.9  
2: V = 30V, L = 5mH, I = 2.0A, unclamped, R = 50,  
DD  
L
G
*
See Figure 1 on Page 5.  
VSD  
1.4  
ISD = 2.0A, VGS = 0V  
ID VDS Characteristics (typical)  
I
D VGS Characteristics (typical)  
RDS (ON) ID Characteristics (typical)  
4
2.0  
2.0  
10V  
VDS = 20V  
VGS = 10V  
5.5V  
3
2
1.5  
1.0  
1.5  
5V  
1.0  
4.5V  
0.5  
0
1
0
0.5  
0
TC = 55ºC  
25ºC  
125ºC  
V
GS = 4V  
0
5
10  
15  
20  
0
2
4
6
8
0
0.5  
1.0  
1.5  
2.0  
150  
150  
VDS (V)  
VGS (V)  
ID (A)  
Re (yfs) ID Characteristics (typical)  
V
DS VGS Characteristics (typical)  
RDS (ON) TC Characteristics (typical)  
20  
15  
10  
5
8
V
DS = 20V  
ID = 1A  
GS = 10V  
V
T
C = 55ºC  
25ºC  
6
4
2
0
125ºC  
1
ID = 2A  
ID = 1A  
0.5  
5
0
0.2  
0.05  
4
5
10  
20  
0.1  
0.5  
ID (A)  
1
2
50  
0
50  
100  
VGS (V)  
Tc (ºC)  
Capacitance VDS Characteristics (typical)  
IDR VSD Characteristics (typical)  
Safe Operating Area  
10  
P
D Ta Characteristics  
(Tc = 25ºC)  
1000  
2.0  
V
GS = 0V  
f= 1MHz  
30  
ID (pulse) max  
5
500  
Ciss  
ID max  
1.5  
1.0  
20  
10  
1
100  
50  
0.5  
V
GS = 0V  
Coss  
5V,10V  
0.5  
0
0.1  
Crss  
40  
Without heatsink  
0
0.05  
0.03  
10  
0
10  
20  
30  
50  
0
50  
100  
Ta (ºC)  
0
0.5  
1.0  
1.5  
3
5
10  
50 100  
VDS (V)  
500 700  
VDS (V)  
VSD (V)  
41  

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