Datasheet > 2SK2796(L)|2SK2796(S)

2SK2796(L)|2SK2796(S)

更新时间： 2022-01-19 02:34:00

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
12页	62K
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数据手册

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2SK2796(L)|2SK2796(S) 数据手册

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2SK2796(L), 2SK2796(S)

Body–Drain Diode Reverse

Typical Capacitance vs.

Drain to Source Voltage

Recovery Time

1000

500

= 0

f = 1 MHz

200

100

Ciss

Coss

di / dt = 50 A / µs

Crss

= 0, Ta = 25 °C

0.1 0.2

0.5

Reverse Drain Current

(A)

Drain to Source Voltage

(V)

Dynamic Input Characteristics

= 5 A

Switching Characteristics

100

d(off)

= 10 V

25 V

50 V

d(on)

= 50 V

25 V

= 10 V, V

= 30 V

PW = 5 µs, duty < 1 %

10 V

0.5

0.1 0.2

Gate Charge Qg (nc)

Drain Current

(A)

1...3 4 567 8 9...12

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与2SK2796(L)|2SK2796(S)相关器件

型号	品牌	获取价格	描述	数据表
2SK2796(S)	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 5A I(D) \| TO-252AA
2SK2796(S)-(1)	RENESAS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2796(S)-(2)	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,5A I(D),TO-252VAR
2SK2796(S)-(3)	RENESAS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2796(S)TL	RENESAS	获取价格	5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2796(S)TR	HITACHI	获取价格	Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal
2SK2796(S)TR	RENESAS	获取价格	5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2796L	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2796L	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2796L-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching