Datasheet > 2SK2796(L)|2SK2796(S)

2SK2796(L)|2SK2796(S)

更新时间： 2022-01-19 02:34:00

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
12页	62K
描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK2796(L)|2SK2796(S) 数据手册

浏览型号2SK2796(L)|2SK2796(S)的Datasheet PDF文件第1页

浏览型号2SK2796(L)|2SK2796(S)的Datasheet PDF文件第2页

浏览型号2SK2796(L)|2SK2796(S)的Datasheet PDF文件第3页

浏览型号2SK2796(L)|2SK2796(S)的Datasheet PDF文件第5页

浏览型号2SK2796(L)|2SK2796(S)的Datasheet PDF文件第6页

2SK2796(L), 2SK2796(S)

Main Characteristics

Power vs. Temperature Derating

Maximum Safe Operation Area

100

DC Operation (Tc = 25°C)

Operation in

this area is

limited by R

DS(on)

0.3

0.1

Ta = 25°C

100

150

200

0.2 0.5

10 20

50 100

(V)

Drain to Source Voltage

Ambient Temperature Ta (°C)

Typical Output Characteristics

6 V

Typical Transfer Characteristics

10 V

5 V

4 V

3.5 V

25°C

–25°C

Pulse Test

3 V

Tc = 75°C

2.5 V

= 10 V

= 2 V

Pulse Test

(V)

Gate to Source Voltage

Drain to Source Voltage

(V)

1 2 345 6 7...12

中文翻译

下载PDF

与2SK2796(L)|2SK2796(S)相关器件

型号	品牌	获取价格	描述	数据表
2SK2796(S)	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 5A I(D) \| TO-252AA
2SK2796(S)-(1)	RENESAS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2796(S)-(2)	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,5A I(D),TO-252VAR
2SK2796(S)-(3)	RENESAS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2796(S)TL	RENESAS	获取价格	5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2796(S)TR	HITACHI	获取价格	Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal
2SK2796(S)TR	RENESAS	获取价格	5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2796L	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2796L	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2796L-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching