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2SK2796(L)|2SK2796(S) PDF预览

2SK2796(L)|2SK2796(S)

更新时间: 2022-01-19 02:34:00
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其他 - ETC /
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2SK2796(L)|2SK2796(S) 数据手册

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2SK2796(L), 2SK2796(S)  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
V
Test Conditions  
Drain to source breakdown voltage V(BR)DSS 60  
ID = 10mA, VGS = 0  
IG = ±100µA, VDS = 0  
VDS = 60 V, VGS = 0  
VGS = ±16V, VDS = 0  
ID = 1mA, VDS = 10V  
ID = 3 A, VGS = 10VNote4  
Gate to source breakdown voltage V(BR)GSS ±20  
V
Zero gate voltege drain current  
Gate to source leak current  
Gate to source cutoff voltage  
IDSS  
1.0  
10  
µA  
µA  
V
IGSS  
±10  
2.0  
0.16  
VGS(off)  
RDS(on)  
Static drain to source on state  
resistance  
0.12  
Static drain to source on state  
resistance  
RDS(on)  
0.16  
0.25  
ID = 3A, VGS = 4VNote4  
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
|yfs|  
Ciss  
Coss  
Crss  
td(on)  
tr  
2.5  
4.0  
180  
90  
30  
9
S
ID = 3A, VDS = 10VNote4  
VDS = 10V  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
VGS = 0  
f = 1MHz  
VGS = 10V, ID = 3A  
RL = 10Ω  
25  
35  
55  
1.0  
40  
Turn-off delay time  
Fall time  
td(off)  
tf  
Body–drain diode forward voltage VDF  
IF = 5A, VGS = 0  
Body–drain diode reverse  
recovery time  
trr  
ns  
IF = 5A, VGS = 0  
diF/ dt =50A/µs  
Note: 4. Pulse test  
3

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