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2SK2775

更新时间： 2024-11-23 22:52:55
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管脉冲
页数 文件大小 规格书
4页 42K
描述
Ultrahigh-Speed Switching Applications

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中文翻译

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2SK2775 技术参数

生命周期：Obsolete包装说明：ZP, 3 PIN
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.84
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：25 A
最大漏极电流 (ID)：25 A最大漏源导通电阻：0.11 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-F2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：100 W
最大脉冲漏极电流 (IDM)：100 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2SK2775 数据手册

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Ordering number:ENN6392  
N-Channel Silicon MOSFET  
2SK2775  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Low ON resistance.  
· Ultrahigh-speed switching.  
· 4V drive.  
2128  
[2SK2775]  
· Enables simplified fabrication, high-density mount-  
ing, and miniaturization in end products due to the  
surface mountable package.  
8.2  
7.8  
6.2  
3
0.6  
1
2
0.3  
0.6  
1.0  
2.54  
1.0  
2.54  
5.08  
7.8  
10.0  
6.0  
1 : Gate  
2 : Source  
3 : Drain  
SANYO : ZP  
(Bottom view)  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
Drain-to-Source Voltage  
V
100  
±20  
25  
V
V
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
GSS  
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
100  
40  
A
PW≤10µs, duty cycle≤1%  
Tc=25°C  
DP  
P
D
Tch  
W
˚C  
˚C  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
100  
max  
Drain-to-Source Breakdown Voltage  
Gate-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
V
I
I
=1mA, V =0  
V
V
(BR)DSS  
(BR)GSS  
D
G
GS  
=±100µA, V =0  
GS  
±20  
I
V
V
V
V
I
=100V, V =0  
100  
µA  
µA  
V
DSS  
DS  
GS  
I
=±16V, V =0  
DS  
=10V, I =1mA  
D
=10V, I =12A  
D
±10  
2.0  
GSS  
GS  
DS  
DS  
V
1.0  
15  
GS(off)  
| yfs |  
Forward Transfer Admittance  
24.5  
S
R
(on)1  
=12V, V =10V  
GS  
60  
80  
80  
mΩ  
mΩ  
DS  
D
Static Drain-to-Source On-State Resistance  
R
(on)2  
I
=12V, V =4V  
GS  
110  
DS  
D
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
60800TS (KOTO) TA-2760 No.6392–1/4  
1234

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2SK2777 TOSHIBA

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