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2SK2683LS

更新时间： 2024-02-25 09:51:01
品牌 Logo 应用领域
三洋 - SANYO 开关通用开关
页数 文件大小 规格书
3页 44K
描述
General-Purpose Switching Device

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中文翻译

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2SK2683LS 技术参数

生命周期：Obsolete零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：250 V
最大漏极电流 (Abs) (ID)：16 A最大漏极电流 (ID)：16 A
最大漏源导通电阻：0.18 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：40 W
最大脉冲漏极电流 (IDM)：64 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2SK2683LS 数据手册

 浏览型号2SK2683LS的Datasheet PDF文件第2页浏览型号2SK2683LS的Datasheet PDF文件第3页 
Ordering number : EN8619  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK2683LS  
Features  
• Low ON-resistance.  
• High-speed diode.  
• Micaless package facilitating.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
250  
±30  
16  
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
GSS  
I
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
PW≤10μs, duty cycle≤1%  
Tc=25˚C  
64  
A
DP  
P
40  
W
°C  
°C  
D
Tch  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
250  
max  
Drain-to-Source Breakdown Voltage  
Gate-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
V
I
I
=1mA, V =0V  
V
V
(BR)DSS  
(BR)GSS  
DSS  
D
GS  
= ±100μA, V =0V  
±30  
G
DS  
I
I
V
V
V
V
=250V, V =0V  
GS  
1.0  
mA  
μA  
V
DS  
GS  
DS  
DS  
= ±25V, V =0V  
DS  
±10  
GSS  
V
(off)  
GS  
=10V, I =1mA  
2.0  
8.5  
3.0  
D
Forward Transfer Admittance  
Static Drain-to-Source On-State Resistance  
yfs  
=10V, I =8A  
14  
130  
S
⏐
⏐
D
R
(on)  
DS  
I
=8A, V =10V  
GS  
180  
mΩ  
D
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
www.semiconductor-sanyo.com/network  
11310QA TK IM TA-0795 No.8619-1/3  
123

中文翻译

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