生命周期: | Obsolete | 零件包装代码: | TO-3PF |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 其他特性: | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
外壳连接: | ISOLATED | 配置: | SINGLE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 70 A |
最大漏源导通电阻: | 0.017 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 100 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 450 ns | 最大开启时间(吨): | 143 ns |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2691-01R_05 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET |
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2SK2695-01 | FUJI |
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N-channel MOS-FET |
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2SK2696-01MR | FUJI |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 700V, 1.85ohm, 1-Element, N-Channel, Silicon, Meta |
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2SK2697-01MR | FUJI |
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Transistor |
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2SK2698 | TOSHIBA |
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N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND M |
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2SK2698(T) | TOSHIBA |
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暂无描述 |
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2SK2698_06 | TOSHIBA |
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Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications |
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2SK2698_09 | TOSHIBA |
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DC−DC Converter, Relay Drive and Motor Drive Applications |
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2SK2699 | TOSHIBA |
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N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER |
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2SK2699(F) | TOSHIBA |
获取价格 |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-3PN |
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