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2SK2709 PDF预览

2SK2709

更新时间: 2024-02-12 01:49:49
品牌 Logo 应用领域
三垦 - SANKEN 局域网
页数 文件大小 规格书
1页 28K
描述
MOSFET

2SK2709 技术参数

生命周期:Obsolete零件包装代码:TO-3PF
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.84其他特性:UL APPROVED
雪崩能效等级(Eas):300 mJ外壳连接:ISOLATED
配置:SINGLE最小漏源击穿电压:600 V
最大漏极电流 (ID):8.5 A最大漏源导通电阻:0.85 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):34 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

2SK2709 数据手册

  
2SK2709  
External dimensions  
2 ...... FM100  
Absolute Maximum Ratings  
Electrical Characteristics  
(Ta = 25ºC)  
(Ta = 25ºC)  
Ratings  
typ  
Symbol  
Ratings  
Unit  
Symbol  
Unit  
Conditions  
min  
600  
max  
V(BR) DSS  
IGSS  
IDSS  
V
nA  
µA  
V
ID = 100µA, VGS = 0V  
VGS = ±30V  
VDSS  
VGSS  
ID  
600  
±30  
V
V
±100  
100  
4.0  
VDS = 600V, VGS = 0V  
VDS = 10V, ID = 1mA  
VDS = 20V, ID = 4A  
±8.5  
A
VTH  
2.0  
5.0  
3.0  
7.0  
1
ID (pulse)  
±34  
A
*
Re (yfs)  
RDS (on)  
Ciss  
Coss  
Crss  
td (on)  
tr  
S
0.65  
1200  
270  
150  
30  
0.85  
VGS = 10V, ID = 4A  
PD  
EAS  
85 (Tc = 25ºC)  
300  
W
mJ  
A
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
2
*
VDS = 10V, f = 1.0MHz,  
VGS = 0V  
IAS  
8.5  
Tch  
Tstg  
150  
ºC  
ºC  
ID = 4A, VDD = 250V,  
RL = 62.5, VGS = 10V,  
See Figure 2 on Page 5.  
40  
55 to +150  
td (off)  
tf  
110  
65  
1: PW 100µs, duty cycle 1%  
2: VDD = 30V, L = 8mH, IL = 8.5A, unclamped, RG = 50,  
See Figure 1on Page 5.  
*
*
VSD  
0.95  
1.5  
ISD = 8.5A, VGS = 0V  
37  

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