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2SK2707 PDF预览

2SK2707

更新时间: 2024-11-14 22:52:55
品牌 Logo 应用领域
三垦 - SANKEN 局域网
页数 文件大小 规格书
1页 37K
描述
MOSFET

2SK2707 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.83其他特性:UL APPROVED
雪崩能效等级(Eas):50 mJ外壳连接:ISOLATED
配置:SINGLE最小漏源击穿电压:600 V
最大漏极电流 (ID):4.5 A最大漏源导通电阻:1.85 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):18 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

2SK2707 数据手册

  
2SK2707  
External dimensions  
1 ...... FM20  
Absolute Maximum Ratings  
Electrical Characteristics  
(Ta = 25ºC)  
(Ta = 25ºC)  
Ratings  
typ  
Symbol  
Ratings  
Unit  
Symbol  
Unit  
Conditions  
min  
600  
max  
V(BR) DSS  
IGSS  
IDSS  
V
nA  
µA  
V
ID = 100µA, VGS = 0V  
VGS = ±30V  
VDSS  
VGSS  
ID  
600  
±30  
V
V
±100  
100  
4.0  
VDS = 600V, VGS = 0V  
VDS = 10V, ID = 1mA  
VDS = 20V, ID = 2A  
±4.5  
A
VTH  
2.0  
2.4  
3.0  
3.5  
1.45  
560  
130  
65  
1
ID (pulse)  
±18  
A
*
Re (yfs)  
RDS (on)  
Ciss  
Coss  
Crss  
td (on)  
tr  
S
1.85  
V
GS = 10V, ID = 2A  
PD  
EAS  
35 (Tc = 25ºC)  
50  
W
mJ  
A
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
2
*
V
DS = 10V, f = 1.0MHz,  
VGS = 0V  
IAS  
4.5  
Tch  
Tstg  
150  
ºC  
ºC  
20  
ID = 2A, VDD = 250V,  
RL = 125, VGS = 10V,  
See Figure 2 on Page 5.  
30  
55 to +150  
td (off)  
tf  
65  
1: PW 100µs, duty cycle 1%  
2: VDD = 30V, L = 5mH, IL = 4.5A, unclamped, RG = 50,  
See Figure 1 on Page 5.  
*
90  
*
VSD  
0.9  
1.5  
ISD = 4.5A, VGS = 0V  
VDS ID Characteristics  
VGS ID Characteristics  
ID RDS (ON) Characteristics  
2.0  
1.6  
1.2  
5
5
4
VGS = 10V  
VDS = 20V  
10V  
5V  
4
3
2
1
0
3
2
1
0
4.5V  
0.8  
0.4  
0
TC = 55ºC  
25ºC  
125ºC  
VGS = 4V  
15  
0
5
10  
20  
0
2
4
6
8
0
1
2
3
4
5
VDS (V)  
VGS (V)  
ID (A)  
I
D Re(yfs) Characteristics  
VGS VDS Characteristics  
TC RDS (ON) Characteristics  
10  
5
10  
8
5
VDS = 20V  
ID = 2A  
VGS = 10V  
TC = 55ºC  
4
3
2
25ºC  
ID = 4.5A  
125ºC  
6
1
4
ID = 2A  
0.5  
2
0
1
0
0.2  
0.05 0.1  
4
5
10  
20  
150  
0.5  
1
4.5  
50  
0
50  
100  
ID (A)  
VGS (V)  
Tc (ºC)  
VDS Capacitance Characteristics  
V
SD IDR Characteristics  
Safe Operating Area  
Ta PD Characteristics  
(Tc=25ºC)  
5000  
5
20  
10  
5
40  
VGS = 0V  
ID (pulse) max  
f= 1MHz  
4
3
ID max  
30  
20  
10  
0
1000  
500  
Ciss  
1
VGS = 0V  
5V,10V  
2
1
0
0.5  
100  
50  
Coss  
Crss  
0.1  
Without heatsink  
20  
0.05  
0
10  
20  
30  
40  
50  
0
0.5  
1.0  
1.5  
0
50  
100  
Ta (ºC)  
150  
3
5
10  
50 100  
VDS (V)  
500 700  
VDS (V)  
VSD (V)  
35  

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