Datasheet > 2SK2699_09

2SK2699_09

更新时间： 2024-01-27 06:51:25

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	420K
描述
Chopper Regulator, DC−DC Converter and Motor Drive Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK2699_09 数据手册

2SK2699

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2699

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.5 Ω (typ.)

DS (ON)

: |Y | = 11 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 600 V)

DSS

: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

600

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

1. GATE

DC (Note 1)

Pulse (Note 1)

2. DRAIN (HEAT SINK)

3. SOURCE

Drain current

Drain power dissipation (Tc = 25°C)

150

JEDEC

―

Single pulse avalanche energy

605

(Note 2)

JEITA

SC-65

2-16C1B

Avalanche current

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 4.6 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.833

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 7.35 mH, R = 25 Ω, I

= 12 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

中文翻译

下载PDF

与2SK2699_09相关器件

型号	品牌	获取价格	描述	数据表
2SK2700	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK2700(T)	TOSHIBA	获取价格	MOSFET N-CH 900V 3A 2-10R1B
2SK2700_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC-DC Converter and Motor Drive Applications
2SK2700_09	TOSHIBA	获取价格	Chopper Regulator, DC-DC Converter and Motor Drive Applications
2SK2701	SANKEN	获取价格	MOSFET
2SK2701A	SANKEN	获取价格	三垦电气的功率MOSFET通过降低导通电阻损耗和开关损耗，有助于提高开关电路效率。
2SK2701A	KEXIN	获取价格	N-Channel MOSFET
2SK2702	SANKEN	获取价格	MOSFET
2SK2703	SANKEN	获取价格	MOSFET
2SK2704	SANKEN	获取价格	MOSFET