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2SK2690 PDF预览

2SK2690

更新时间: 2024-01-26 04:18:38
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富士电机 - FUJI /
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3页 343K
描述
N-channel MOS-FET

2SK2690 数据手册

 浏览型号2SK2690的Datasheet PDF文件第2页浏览型号2SK2690的Datasheet PDF文件第3页 
N-channel MOS-FET  
2SK2690-01  
FAP-IIIB Series  
60V 0,01W 80A 125W  
> Features  
> Outline Drawing  
- High Current  
- Low On-Resistance  
- No Secondary Breakdown  
- Low Driving Power  
- Avalanche Rated  
> Applications  
- Motor Control  
- General Purpose Power Amplifier  
DC-DC converters  
-
> Maximum Ratings and Characteristics  
> Equivalent Circuit  
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified  
Item  
Symbol  
Rating  
Unit  
V
Drain-Source-Voltage  
Continous Drain Current  
Pulsed Drain Current  
V
60  
80  
DS  
I
A
D
I
320  
A
D(puls)  
Gate-Source-Voltage  
V
±20  
599  
V
GS  
Maximum Avalanche Energy  
Max. Power Dissipation  
Operating and Storage Temperature Range  
E
mJ*  
W
AV  
P
125  
D
T
150  
°C  
°C  
ch  
T
-55 ~ +150  
* L=0,125mH, VCC=24V  
stg  
Electrical Characteristics (TC=25°C), unless otherwise specified  
-
Item  
Symbol  
Test conditions  
Min.  
60  
Typ.  
1,5  
Max.  
Unit  
V
ID=1mA  
ID=1mA  
VDS=60V  
VGS=0V  
Drain-Source Breakdown-Voltage  
Gate Threshhold Voltage  
Zero Gate Voltage Drain Current  
V
(BR)DSS  
VDS=VGS  
Tch=25°C  
Tch=125°C  
VDS=0V  
V
1,0  
2,0  
500  
1,0  
V
GS(th)  
I
10  
0,2  
10  
µA  
mA  
nA  
W
DSS  
V
GS=0V  
VGS=±20V  
ID=40A  
Gate Source Leakage Current  
I
100  
GSS  
VGS=4V  
Drain Source On-State Resistance  
R
0,012 0,017  
DS(on)  
VGS=10V  
VDS=25V  
0,0075  
55  
0,01  
W
S
ID=40A  
Forward Transconductance  
Input Capacitance  
g
25  
fs  
VDS=25V  
C
3500  
1250  
360  
15  
5250  
1870  
540  
23  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
A
iss  
VGS=0V  
f=1MHz  
VCC=30V  
ID=75A  
Output Capacitance  
C
oss  
Reverse Transfer Capacitance  
Turn-On-Time ton (ton=td(on)+tr)  
C
rss  
t
d(on)  
t
75  
120  
285  
165  
r
Turn-Off-Time toff (ton=td(off)+tf)  
VGS=10V  
RGS=10 W  
t
190  
110  
d(off)  
t
f
Tch=25°C  
Avalanche Capability  
I
L = 100µH  
80  
AV  
IF=160A VGS=0V Tch=25°C  
IF=80A VGS=0V  
Diode Forward On-Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
V
1,15  
75  
1,65  
120  
V
SD  
t
ns  
µC  
rr  
-dIF/dt=100A/µs Tch=25°C  
Q
0,17  
rr  
-
Thermal Characteristics  
Item  
Symbol  
Test conditions  
channel to air  
Min.  
Typ.  
Max.  
35  
Unit  
Thermal Resistance  
R
°C/W  
th(ch-a)  
R
channel to case  
1,0 °C/W  
th(ch-c)  
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98  

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