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2SK2602_10

更新时间： 2024-11-14 07:32:23
品牌 Logo 应用领域
东芝 - TOSHIBA 稳压器开关
页数 文件大小 规格书
6页 414K
描述
Switching Regulator Applications

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中文翻译

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2SK2602_10 数据手册

 浏览型号2SK2602_10的Datasheet PDF文件第2页浏览型号2SK2602_10的Datasheet PDF文件第3页浏览型号2SK2602_10的Datasheet PDF文件第4页浏览型号2SK2602_10的Datasheet PDF文件第5页浏览型号2SK2602_10的Datasheet PDF文件第6页 
2SK2602  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)  
2SK2602  
Switching Regulator Applications  
Unit: mm  
z Low drain−source ON-resistance  
z High forward transfer admittance  
: R  
= 0.9 Ω (typ.)  
DS (ON)  
: |Y | = 5.5 S (typ.)  
fs  
z Low leakage current  
z Enhancement mode  
: I  
= 100 μA (max) (V  
= 600 V)  
DSS  
DS  
: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain−source voltage  
Symbol  
Rating  
Unit  
V
600  
600  
±30  
6
V
V
DSS  
Drain−gate voltage (R  
Gate−source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
V
GSS  
1. GATE  
DC (Note 1)  
Pulse (Note 1)  
I
A
D
2. DRAIN (HEAT SINK)  
3. SOURCE  
Drain current  
I
24  
A
DP  
Drain power dissipation (Tc = 25°C)  
P
125  
W
D
AS  
AR  
JEDEC  
―
Single pulse avalanche energy  
E
345  
mJ  
(Note 2)  
JEITA  
SC-65  
2-16C1B  
Avalanche current  
I
6
12.5  
A
TOSHIBA  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 4.6 g (typ.)  
T
ch  
150  
Storage temperature range  
T
−55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and  
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
1.0  
50  
Unit  
Thermal resistance, channel to case  
R
°C / W  
°C / W  
th (ch−c)  
th (ch−a)  
Thermal resistance, channel to  
ambient  
R
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 16.8 mH, R = 25 Ω, I  
V
DD  
= 6 A  
AR  
ch  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2010-04-13  
123456

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