Datasheet > 2SK2601_10

2SK2601_10

更新时间： 2024-11-14 07:32:23

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器转换器继电器电机 DC-DC转换器
页数	文件大小	规格书
6页	420K
描述
DC−DC Converter, Relay Drive and Motor Drive Applications

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中文翻译

获取价格

数据手册

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2SK2601_10 数据手册

2SK2601

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2601

DC−DC Converter, Relay Drive and Motor Drive

Applications

Unit: mm

z Low drain−source ON-resistance

z High forward transfer admittance

: R

= 0.56 Ω (typ.)

DS (ON)

: |Y | = 7.0 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 500 V)

DSS

: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

1. GATE

DC (Note 1)

Pulse (Note 1)

2. DRAIN (HEAT SINK)

3. SOURCE

Drain current

Drain power dissipation (Tc = 25°C)

125

JEDEC

―

Single pulse avalanche energy

270

(Note 2)

JEITA

SC-65

2-16C1B

Avalanche current

12.5

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 4.6 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.0

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 4.59 mH, R = 25 Ω, I

= 10 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2010-01-29

12 3 4 5 6

中文翻译

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