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2SK2593 PDF预览

2SK2593

更新时间: 2024-09-30 22:52:55
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
2页 35K
描述
Silicon N-Channel Junction FET

2SK2593 技术参数

生命周期:Obsolete零件包装代码:SC-89
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.83
其他特性:LOW NOISE配置:SINGLE
最大漏极电流 (ID):0.03 AFET 技术:JUNCTION
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK2593 数据手册

 浏览型号2SK2593的Datasheet PDF文件第2页 
Silicon Junction FETs (Small Signal)  
2SK2593  
Silicon N-Channel Junction FET  
For low-frequency amplification  
For switching  
unit: mm  
1.6±0.15  
0.8±0.1  
0.4  
0.4  
Features  
Low noies, high gain  
1
High gate to drain voltage VGDO  
Mini-type package, allowing downsizing of the sets and automatic  
insertion through the tape/magazine packing.  
3
2
Absolute Maximum Ratings (Ta = 25°C)  
Parameter  
Drain to Source voltage  
Gate to Drain voltage  
Gate to Source voltage  
Drain current  
Symbol  
VDSX  
VGDO  
VGSO  
ID  
Ratings  
55  
Unit  
V
0.2±0.1  
55  
V
1: Source  
2: Drain  
3: Gate  
55  
V
EIAJ: SC-75  
SS-Mini Type Package (3-pin)  
±30  
mA  
mA  
mW  
°C  
Gate current  
IG  
10  
Marking Symbol (Example): 2B  
Allowable power dissipation  
Junction temperature  
Storage temperature  
PD  
125  
Tj  
125  
Tstg  
55 to +125  
°C  
Electrical Characteristics (Ta = 25°C)  
Parameter  
Symbol  
Conditions  
min  
typ  
max  
20  
Unit  
mA  
nA  
V
*
Drain to Source cut-off current  
Gate to Source leakage current  
Gate to Drain voltage  
IDSS  
VDS = 10V, VGS = 0  
GS = 30V, VDS = 0  
1
IGSS  
V
10  
VGDS  
VGSC  
IG = 100µA, VDS = 0  
55  
80  
Gate to Source cut-off voltage  
Forward transfer admittance  
VDS = 10V, ID = 10µA  
5  
V
| Yfs  
|
VDS = 10V, ID = 5mA, f = 1kHz  
2.5  
7.5  
6.5  
1.9  
mS  
pF  
Input capacitance (Common Source) Ciss  
VDS = 10V, VGS = 0, f = 1MHz  
Reverse transfer capacitance (Common Source) Crss  
pF  
VDS = 10V, VGS = 0, Rg = 100kΩ  
Noise figure  
NF  
2.5  
dB  
f = 100Hz  
* IDSS rank classification  
Runk  
P
Q
R
S
IDSS (mA)  
1 to 3  
2BP  
2 to 6.5  
2BQ  
5 to 12  
2BR  
10 to 20  
2BS  
Marking Symbol  
1

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