5秒后页面跳转
2SK2595AX PDF预览

2SK2595AX

更新时间: 2024-11-14 13:04:27
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体放大器射频场效应晶体管功率放大器
页数 文件大小 规格书
14页 115K
描述
暂无描述

2SK2595AX 技术参数

生命周期:Obsolete包装说明:RP8P-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.15
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:17 V最大漏极电流 (Abs) (ID):1.1 A
最大漏极电流 (ID):1.1 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):20 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2SK2595AX 数据手册

 浏览型号2SK2595AX的Datasheet PDF文件第2页浏览型号2SK2595AX的Datasheet PDF文件第3页浏览型号2SK2595AX的Datasheet PDF文件第4页浏览型号2SK2595AX的Datasheet PDF文件第5页浏览型号2SK2595AX的Datasheet PDF文件第6页浏览型号2SK2595AX的Datasheet PDF文件第7页 
2SK2595  
Silicon N-Channel MOS FET  
UHF Power Amplifier  
REJ03G0206-0400  
Rev.4.00  
Feb.14.2005  
Features  
High power output, High gain, High efficiency  
PG = 7.8 dB, Pout = 5.37 W, ηD = 50% min. (f = 836.5 MHz)  
Compact package capable of surface mounting  
Outline  
PLSS0003ZA-A  
(Previous code : RP8P)  
D
1
G
3
2
1. Gate  
2. Source  
3. Drain  
S
Note: Marking is "AX".  
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
Unit  
17  
V
V
±10  
1.1  
A
Note1  
Drain peak current  
ID(pulse)  
PchNote2  
Tch  
5
20  
A
Channel dissipation  
W
°C  
°C  
Channel temperature  
Storage temperature  
Notes: 1. PW 10 µs, duty cycle 1%  
2. Value at Tc = 25°C  
150  
Tstg  
– 45 to +150  
Rev.4.00, Feb.14.2005, page 1 of 13  

2SK2595AX 替代型号

型号 品牌 替代类型 描述 数据表
2SK2595AXTB-E RENESAS

功能相似

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, RP8P, 2 PIN
2SK2595 RENESAS

功能相似

Silicon N-Channel MOS FET UHF Power Amplifier

与2SK2595AX相关器件

型号 品牌 获取价格 描述 数据表
2SK2595AXTB RENESAS

获取价格

暂无描述
2SK2595AXTB-E RENESAS

获取价格

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, RP8P, 2 PIN
2SK2595AXUB RENESAS

获取价格

RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxi
2SK2596 RENESAS

获取价格

Silicon N-Channel MOS FET UHF Power Amplifier
2SK2596_07 RENESAS

获取价格

Silicon N-Channel MOS FET UHF Power Amplifier
2SK2596BX RENESAS

获取价格

Silicon N-Channel MOS FET UHF Power Amplifier
2SK2596BXTL RENESAS

获取价格

暂无描述
2SK2596BXTL-E RENESAS

获取价格

Silicon N-Channel MOS FET UHF Power Amplifier
2SK2596BXTR RENESAS

获取价格

暂无描述
2SK2596BXUL RENESAS

获取价格

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET