Datasheet > 2SK2599(TP)

2SK2599(TP)

更新时间： 2024-01-26 09:19:33

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	419K
描述
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,2A I(D),SIP

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技术参数
数据手册

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2SK2599(TP) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	2 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	1.3 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

2SK2599(TP) 数据手册

2SK2599

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2599

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 2.9 Ω (typ.)

DS (ON)

: |Y | = 1.7 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 500 V)

DSS

: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Pulse (t = 1 ms)

Drain current

(Note 1)

JEDEC

JEITA

―

Pulse (t = 100 μs)

1.3

112

(Note 1)

TOSHIBA

2-8M1B

Drain power dissipation

Single pulse avalanche energy

Weight: 0.54 g (typ.)

(Note 2)

Avalanche current

0.13

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

96.1

Unit

Thermal resistance, channel to ambient

°C / W

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 48.4 mH, R = 25 Ω, I

= 2 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

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