2SK2599(TP,Q)

更新时间： 2024-10-01 12:59:43

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体驱动器转换器稳压器晶体管功率场效应晶体管开关脉冲电机 DC-DC转换器
页数	文件大小	规格书
6页	426K
描述
2SK2599(TP,Q)

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中文翻译

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技术参数
数据手册

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2SK2599(TP,Q) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2SK2599(TP,Q) 数据手册

2SK2599

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2599

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON-resistance

z High forward transfer admittance

: R

= 2.9 Ω (typ.)

DS (ON)

: |Y | = 1.7 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 500 V)

DSS

: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Pulse (t = 1 ms)

Drain current

(Note 1)

JEDEC

JEITA

―

Pulse (t = 100 μs)

1.3

112

(Note 1)

TOSHIBA

2-8M1B

Drain power dissipation

Single pulse avalanche energy

Weight: 0.54 g (typ.)

(Note 2)

Avalanche current

0.13

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

96.1

Unit

Thermal resistance, channel to ambient

°C / W

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 48.4 mH, R = 25 Ω, I

= 2 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2010-04-13

12 3 4 5 6

中文翻译

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与2SK2599(TP,Q)相关器件

型号	品牌	获取价格	描述	数据表
2SK2599_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic
2SK2599_10	TOSHIBA	获取价格	Chopper Regulator, DC−DC Converter and Motor Drive
2SK259H	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 5A I(D) \| TO-3
2SK2601	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND M
2SK2601(F)	TOSHIBA	获取价格	暂无描述
2SK2601(Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,10A I(D),TO-247VAR
2SK2601_06	TOSHIBA	获取价格	Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications
2SK2601_10	TOSHIBA	获取价格	DC−DC Converter, Relay Drive and Motor Drive Applications
2SK2602	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR APPLICATIONS)
2SK2602(Q)	TOSHIBA	获取价格	暂无描述

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