2SK2596BXTR

更新时间： 2024-10-01 13:04:27

品牌	Logo	应用领域
瑞萨 - RENESAS		放大器功率放大器
页数	文件大小	规格书
5页	61K
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2SK2596BXTR 数据手册

2SK2596

Silicon N-Channel MOS FET

UHF Power Amplifier

REJ03G0207-0300

(Previous ADE-208-1367(Z))

Rev.3.00

Feb.14.2005

Features

•

High power output, High gain, High efficiency

PG = 12.2 dB, Pout = 30.2 dBm, ηD = 45%min. (f = 836.5 MHz)

Compact package capable of surface mounting

•

Outline

PLZZ0004CA-A

(Previous code : UPAK)

1. Gate

2. Source

3. Drain

4. Source

Note: Marking is “BX“.

This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

±10

0.4

Note1

Drain peak current

I_D(pulse)

Pch ^Note2

Tch

Channel dissipation

°C

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

150

Tstg

–45 to +150

Rev.3.00, Feb.14.2005, page 1 of 4

12 3 4 5

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