2SK2596

更新时间： 2024-11-14 04:26:27

品牌	Logo	应用领域
瑞萨 - RENESAS		放大器功率放大器
页数	文件大小	规格书
5页	61K
描述
Silicon N-Channel MOS FET UHF Power Amplifier

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

2SK2596 数据手册

2SK2596

Silicon N-Channel MOS FET

UHF Power Amplifier

REJ03G0207-0300

(Previous ADE-208-1367(Z))

Rev.3.00

Feb.14.2005

Features

•

High power output, High gain, High efficiency

PG = 12.2 dB, Pout = 30.2 dBm, ηD = 45%min. (f = 836.5 MHz)

Compact package capable of surface mounting

•

Outline

PLZZ0004CA-A

(Previous code : UPAK)

1. Gate

2. Source

3. Drain

4. Source

Note: Marking is “BX“.

This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

±10

0.4

Note1

Drain peak current

I_D(pulse)

Pch ^Note2

Tch

Channel dissipation

°C

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

150

Tstg

–45 to +150

Rev.3.00, Feb.14.2005, page 1 of 4

12 3 4 5

中文翻译

下载PDF

2SK2596 替代型号

型号	品牌	替代类型	描述	数据表
2SK2596BXTL-E	RENESAS	功能相似	Silicon N-Channel MOS FET UHF Power Amplifier

与2SK2596相关器件

型号	品牌	获取价格	描述	数据表
2SK2596_07	RENESAS	获取价格	Silicon N-Channel MOS FET UHF Power Amplifier
2SK2596BX	RENESAS	获取价格	Silicon N-Channel MOS FET UHF Power Amplifier
2SK2596BXTL	RENESAS	获取价格	暂无描述
2SK2596BXTL-E	RENESAS	获取价格	Silicon N-Channel MOS FET UHF Power Amplifier
2SK2596BXTR	RENESAS	获取价格	暂无描述
2SK2596BXUL	RENESAS	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
2SK2596BXUR	RENESAS	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
2SK2597	NEC	获取价格	N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLI
2SK2598	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK2598(SM)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,13A I(D),TO-263ABVAR