2SK2593GQ

更新时间： 2024-10-01 13:04:27

品牌	Logo	应用领域
松下 - PANASONIC		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
2页	35K
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中文翻译

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数据手册

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2SK2593GQ 数据手册

Silicon Junction FETs (Small Signal)

2SK2593

Silicon N-Channel Junction FET

For low-frequency amplification

For switching

unit: mm

1.6±0.15

0.8±0.1

0.4

■ Features

● Low noies, high gain

● High gate to drain voltage V_GDO

● Mini-type package, allowing downsizing of the sets and automatic

insertion through the tape/magazine packing.

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter

Drain to Source voltage

Gate to Drain voltage

Gate to Source voltage

Drain current

Symbol

V_DSX

V_GDO

V_GSO

I_D

Ratings

Unit

0.2±0.1

−55

1: Source

2: Drain

3: Gate

−55

EIAJ: SC-75

SS-Mini Type Package (3-pin)

±30

°C

Gate current

I_G

Marking Symbol (Example): 2B

Allowable power dissipation

Junction temperature

Storage temperature

P_D

125

T_j

125

T_stg

−55 to +125

°C

■ Electrical Characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Drain to Source cut-off current

Gate to Source leakage current

Gate to Drain voltage

I_DSS

V_DS= 10V, V_GS= 0

_GS= −30V, V_DS= 0

I_GSS

V_GDS

V_GSC

I_G= −100µA, V_DS= 0

Gate to Source cut-off voltage

Forward transfer admittance

V_DS= 10V, I_D= 10µA

−5

| Y_fs

V_DS= 10V, I_D= 5mA, f = 1kHz

2.5

7.5

6.5

1.9

Input capacitance (Common Source) C_iss

V_DS= 10V, V_GS= 0, f = 1MHz

Reverse transfer capacitance (Common Source) C_rss

V_DS= 10V, V_GS= 0, R_g= 100kΩ

Noise figure

2.5

f = 100Hz

^*I_DSSrank classification

Runk

I_DSS(mA)

1 to 3

2BP

2 to 6.5

2BQ

5 to 12

2BR

10 to 20

2BS

Marking Symbol

中文翻译

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