Datasheet > 2SK1828

2SK1828

更新时间： 2024-11-11 06:23:03

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	41K
描述
MOS Field Effect Transistor

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中文翻译

获取价格

数据手册

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2SK1828 数据手册

SMD Type

MOSFET

MOS Field Effect Transistor

2SK1828

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

2.5V Gate Drive

Low Threshold Voltage :Vth=0.5 to 1.5V

High Speed

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

1 GATE

2.Emitter

2 SOURCE

3.collector

3 DRAIN

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

m W

Power dissipation

P^D

200

Channel temperature

Storage temperature

T^ch

150

Tstg

-55 to +150

* PW 10ms, duty cycle

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Drain source breakdown voltage

Drain cut-off current

V^DSS

I^DSS

I^GSS

Yfs

ID=100 A,VGS=0

VDS=20V,VGS=0

VGS=10V,VDS=0

VDS=3.0V,ID=10mA

1.0

Gate leakage current

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

R^DS(on)VGS=2.5V,ID=10mA

Ciss

5.5

V^DS=3.0V,VGS=0,f=1MHZ

Output capacitance

C^oss

C^rss

ton

1.6

Reverse transfer capacitance

Switching time turn on time

Switching time turn off time

6.5

0.14

I^D=10mA,VGS(on)=0 to 2.5V,VDD=3.0V

toff

Marking

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