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2SK1829TE85L PDF预览

2SK1829TE85L

更新时间: 2024-11-11 14:39:27
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 273K
描述
TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal

2SK1829TE85L 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.75
Is Samacsys:N配置:SINGLE
最小漏源击穿电压:20 V最大漏极电流 (ID):0.05 A
最大漏源导通电阻:40 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK1829TE85L 数据手册

 浏览型号2SK1829TE85L的Datasheet PDF文件第2页浏览型号2SK1829TE85L的Datasheet PDF文件第3页浏览型号2SK1829TE85L的Datasheet PDF文件第4页浏览型号2SK1829TE85L的Datasheet PDF文件第5页 
2SK1829  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
2SK1829  
High Speed Switching Applications  
Unit: mm  
Analog Switch Applications  
2.5 V gate drive  
Low threshold voltage: V = 0.5~1.5 V  
th  
High speed  
Enhancement-mode  
Small package  
Marking  
Equivalent Circuit  
JEDEC  
JEITA  
Absolute Maximum Ratings (Ta = 25°C)  
SC-70  
2-2E1E  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
TOSHIBA  
V
20  
10  
V
V
DS  
Weight: 0.006 g (typ.)  
Gate-source voltage  
DC drain current  
V
GSS  
I
50  
mA  
mW  
°C  
D
Drain power dissipation  
Channel temperature  
Storage temperature range  
P
100  
D
ch  
stg  
T
150  
T
55~150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note: This transistor is electrostatic sensitive device.  
Please handle with caution.  
1
2007-11-01  

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