生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.68 |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 0.05 A | 最大漏源导通电阻: | 40 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1830(TE85L) | TOSHIBA |
获取价格 |
2SK1830(TE85L) | |
2SK1830(TE85L,F) | TOSHIBA |
获取价格 |
Trans MOSFET N-CH 20V 0.05A 3-Pin SSM T/R | |
2SK1830,LF(T | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor | |
2SK1830_07 | TOSHIBA |
获取价格 |
N CHANNEL MS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) | |
2SK1830TE85L | TOSHIBA |
获取价格 |
TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Sig | |
2SK1830TE85R | TOSHIBA |
获取价格 |
TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Sig | |
2SK1831 | HITACHI |
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Silicon N-Channel MOS FET | |
2SK1831|2SK1832 | ETC |
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||
2SK1832 | RENESAS |
获取价格 |
Silicon N Channel MOS FET | |
2SK1832 | HITACHI |
获取价格 |
Silicon N-Channel MOS FET |