Datasheet > 2SK1833

2SK1833

更新时间： 2024-09-23 23:20:35

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描述

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中文翻译

获取价格

数据手册

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2SK1833 数据手册

Power F-MOS FETs

2SK1833

Silicon N-Channel Power F-MOS FET

■ Features

● Avalanche energy capacity guaranteed: EAS > 90mJ

unit: mm

● V_GSS= ±30V guaranteed

● High-speed switching: t_f= 30ns

● No secondary breakdown

10.0±0.2

5.5±0.2

4.2±0.2

2.7±0.2

φ3.1±0.1

■ Applications

● Contactless relay

● Diving circuit for a solenoid

● Driving circuit for a motor

● Control equipment

1.3±0.2

1.4±0.1

+0.2

0.5

–0.1

● Switching power supply

0.8±0.1

2.54±0.25

■ Absolute Maximum Ratings (T_C= 25°C)

5.08±0.5

Parameter

Symbol

Ratings

Unit

1: Gate

2: Drain

Drain to Source breakdown voltage V_DSS

500

3: Source

EIAJ: SC-67

TOP-220 Full Pack Package (a)

Gate to Source voltage

Pulse

Avalanche energy capacity

V_GSS

I_D

±30

±2.5

Drain current

I_DP

±5

EAS^*

15.6

Allowable power

dissipation

T_C= 25°C

Ta = 25°C

P_D

Channel temperature

Storage temperature

T_ch

150

°C

T_stg

−55 to +150

L = 5mH, I_L= 2.5A, V_DD= 50V, 1 pulse

■ Electrical Characteristics (T_C= 25°C)

Parameter

Symbol

I_DSS

Conditions

V_DS= 400V, V_GS= 0

V_GS= ±30V, V_DS= 0

I_D= 1mA, V_GS= 0

min

typ

max

0.1

Unit

µA

Drain to Source cut-off current

Gate to Source leakage current

I_GSS

±1

Drain to Source breakdown voltage V_DSS

500

Gate threshold voltage

V_th

V_DS= 25V, I_D= 1mA

V_GS= 10V, I_D= 1.5A

V_DS= 25V, I_D= 1.5A

I_DR= 2.5A, V_GS= 0

Drain to Source ON-resistance

Forward transfer admittance

Diode forward voltage

R_DS(on)

| Y_fs|

V_DSF

3.2

1.5

Ω

−1.5

Input capacitance (Common Source) C_iss

Output capacitance (Common Source) C_oss

Reverse transfer capacitance (Common Source) C_rss

330

V_DS= 20V, V_GS= 0, f = 1MHz

Turn-on time

t_on

V_GS= 10V, I_D= 1.5A

Fall time

t_f

V_DD= 150V, R_L= 100Ω

Turn-off time (delay time)

Thermal resistance between channel and case

t_d(off)

R_th(ch-c)

3.125

°C/W

12 3

中文翻译

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