Datasheet > 2SK1828(TE85L,F)

2SK1828(TE85L,F)

更新时间： 2024-11-11 14:48:07

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	305K
描述
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,50MA I(D),SC-59

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中文翻译

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技术参数
数据手册

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2SK1828(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.73	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	0.05 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.2 W	子类别：	FET General Purpose Powers
表面贴装：	YES	Base Number Matches：	1

2SK1828(TE85L,F) 数据手册

2SK1828

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK1828

High Speed Switching Applications

Unit: mm

Analog Switch Applications

•

2.5 V gate drive

Low threshold voltage: V = 0.5~1.5 V

High speed

Enhancement-mode

Small package

Marking

Equivalent Circuit

JEDEC

JEITA

TO-236MOD

SC-59

TOSHIBA

2-3F1F

Weight: 0.012 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

Gate-source voltage

DC drain current

GSS

°C

Drain power dissipation

Channel temperature

Storage temperature range

200

stg

150

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note: This transistor is electrostatic sensitive device.

Please handle with caution.

2007-11-01

12 3 4 5

中文翻译

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