是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.91 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 7 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 125 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SK1081-01 | FUJI | N-CHANNEL SILICON POWER MOS-FET |
获取价格 |
|
2SK1081-01 | NJSEMI | N-CHANNEL SILICON POWER MOS-FET |
获取价格 |
|
2SK108-11-C | MITSUBISHI | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction |
获取价格 |
|
2SK108-11-D | MITSUBISHI | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction |
获取价格 |
|
2SK108-11-E | MITSUBISHI | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction |
获取价格 |
|
2SK1082 | FUJI | N-Channel Silicon Power MOS-FET |
获取价格 |