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2SK1070PIETR-E PDF预览

2SK1070PIETR-E

更新时间: 2024-02-11 14:44:18
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号场效应晶体管光电二极管放大器
页数 文件大小 规格书
5页 58K
描述
50mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, MPAK-3

2SK1070PIETR-E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.47配置:SINGLE
最大漏极电流 (ID):0.05 AFET 技术:JUNCTION
JESD-30 代码:R-PDSO-G3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:20
晶体管应用:AMPLIFIER晶体管元件材料:SILICON

2SK1070PIETR-E 数据手册

 浏览型号2SK1070PIETR-E的Datasheet PDF文件第1页浏览型号2SK1070PIETR-E的Datasheet PDF文件第2页浏览型号2SK1070PIETR-E的Datasheet PDF文件第4页浏览型号2SK1070PIETR-E的Datasheet PDF文件第5页 
2SK1070  
Forward Transfer Admittance  
vs. Gate to Source Voltage  
Gate Cutoff Current  
vs. Gate to Source Voltage  
50  
40  
30  
20  
10  
0
1,000  
100  
10  
VDS = 5 V  
f = 1 kHz  
VDS = 0  
1.0  
0.1  
–1.25 –1.0 –0.75 –0.5 –0.25  
0
0
–10  
–20  
–30  
–40  
–50  
Gate to Source Voltage VGS (V)  
Gate to Source Voltage VGS (V)  
Reverse Transfer Capacitance  
vs. Drain to Source Voltage  
Input Capacitance vs.  
Drain to Source Voltage  
100  
50  
100  
50  
f = 1 MHz  
VGS = 0  
f = 1 MHz  
GS = 0  
V
20  
10  
5
20  
10  
5
2
1
2
1
0.1 0.2  
0.5 1.0  
2
5
10  
0.1 0.2  
0.5  
1.0  
2
5
10  
Drain to Source Voltage VDS (V)  
Drain to Source Voltage VDS (V)  
Noise Figure vs.  
Noise Figure vs. Frequency  
Signal Source Resistance  
12  
10  
8
12  
10  
8
VDS = 5 V  
D = 1 mA  
Rg = 1 k  
VDS = 5 V  
ID = 1 mA  
f = 1 kHz  
I
6
6
4
4
2
2
0
10  
0
10  
100  
1 k  
10 k  
100 k  
100  
1 k  
10 k  
100 k  
Frequency f (Hz)  
Signal Source Resistance Rg ()  
Rev.2.00, Mar.14.2005, page 3 of 4  

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