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2SD880-BP PDF预览

2SD880-BP

更新时间: 2024-11-18 19:43:39
品牌 Logo 应用领域
美微科 - MCC 局域网放大器晶体管
页数 文件大小 规格书
2页 132K
描述
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN

2SD880-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.63最大集电极电流 (IC):3 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

2SD880-BP 数据手册

 浏览型号2SD880-BP的Datasheet PDF文件第2页 
2SD880  
M C C  
TM  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
2SD880-Q  
2SD880-Y  
2SD880-GR  
Micro Commercial Components  
Features  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
NPN Silicon  
Power Transistors  
RoHS Compliant. See ordering information)  
Power amplifier applications  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Maximum Ratings  
TO-220  
Symbol  
Rating  
Rating  
Unit  
C
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
60  
60  
7
3
1.5  
V
V
V
B
S
F
A
Q
PC  
TJ  
Collector power dissipation  
Junction Temperature  
Storage Temperature  
W
R
R
T
-55 to +150  
A
TSTG  
-55 to +150  
U
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
1
2
3
Symbol  
Parameter  
Min  
Type  
Max  
Units  
H
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage  
(IC=50mAdc, IB=0)  
Collector-Base Breakdown Voltage  
(IC=100uAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=100uAdc, IC=0)  
Collector-Base Cutoff Current  
(VCB=60Vdc,IE=0)  
60  
60  
7
---  
---  
---  
---  
---  
---  
---  
Vdc  
Vdc  
K
---  
Vdc  
V
L
J
---  
---  
100  
100  
uAdc  
uAdc  
D
R
G
IEBO  
Emitter-Base Cutoff Current  
(VEB=7Vdc, IC=0)  
N
PIN 1.  
PIN 2.  
PIN 3.  
BASE  
COLLECTOR  
EMITTER  
ON CHARACTERISTICS  
hFE  
VCE(sat)  
VBE  
Forward Current Transfer ratio  
DIMENSIONS  
(IC=500mAdc, VCE=5Vdc)  
Collector-Emitter Saturation Voltage  
(IC=3Adc, IB=300mAdc)  
Base-Emitter Voltage  
(IC=0.5Adc,VCE=5Vdc)  
60  
---  
---  
---  
300  
1
---  
Vdc  
INCHES  
MM  
MIN  
14.22  
9.65  
MAX  
15.88  
10.67  
NOTE  
DIM  
A
MIN  
MAX  
.625  
.560  
.380  
.140  
B
C
.420  
.190  
---  
---  
---  
---  
3
1
Vdc  
MHz  
pF  
3.56  
4.82  
D
F
.020  
.139  
.190  
---  
.045  
.161  
.110  
.250  
.025  
0.51  
3.53  
2.29  
---  
1.14  
4.09  
2.79  
6.35  
0.64  
fT  
Transistor Frequency  
---  
---  
(IC=500mAdc, VCE=5Vdc)  
Collector Output Capacitance  
(VCB=10Vdc, IE=0, f=1MHz)  
G
H
J
Cob  
70  
.012  
0.30  
K
L
.500  
.045  
.580  
.060  
12.70  
1.14  
14.73  
1.52  
ton  
ts  
tf  
Turn on time  
Storage time  
Fall time  
---  
---  
---  
0.8  
1.5  
0.8  
---  
---  
---  
us  
us  
us  
IB1=-IB2=0.2A, IC=2A,  
VCC=30V, PW=20us  
N
.190  
.210  
4.83  
5.33  
Q
R
S
T
U
V
.100  
.080  
.045  
.230  
-----  
.135  
.115  
.055  
.270  
.050  
-----  
2.54  
2.04  
1.14  
5.84  
-----  
3.43  
2.92  
1.39  
6.86  
1.27  
-----  
Classification OF hFE(1)  
Rank  
Range  
Q
Y
GR  
150-300  
60-120  
100-200  
.045  
1.15  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
Revision: 4  
2008/01/01  

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