2SD880P

更新时间： 2024-09-27 13:04:23

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管功率双极晶体管放大器局域网
页数	文件大小	规格书
2页	206K
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2SD880P 数据手册

M C C

Micro Commercial Components

2SD880-Q

2SD880-Y

2SD880-GR

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

•

Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

NPN Silicon

Power Transistors

RoHS Compliant. See ordering information)

Power amplifier applications

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

•

Maximum Ratings

Symbol

TO-220

Rating

Unit

V_CEO

V_CBO

V_EBO

I_C

P_C

T_J

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Collector power dissipation

Junction Temperature

Storage Temperature

1.5

-55 to +150

T_STG

-55 to +150

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Type

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

(I_C=50mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=100uAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=100uAdc, I_C=0)

Collector-Base Cutoff Current

(V_CB=60Vdc,I_E=0)

---

Vdc

---

Vdc

---

100

uAdc

I_EBO

Emitter-Base Cutoff Current

(V_EB=7Vdc, I_C=0)

PIN 1.

PIN 2.

PIN 3.

BASE

COLLECTOR

EMITTER

ON CHARACTERISTICS

h_FE

V_CE(sat)

V_BE

Forward Current Transfer ratio

DIMENSIONS

(I_C=500mAdc, V_CE=5Vdc)

Collector-Emitter Saturation Voltage

(I_C=3Adc, I_B=300mAdc)

Base-Emitter Voltage

(I_C=0.5Adc,V_CE=5Vdc)

---

300

---

Vdc

INCHES

MIN

14.22

9.65

MAX

15.88

10.67

NOTE

DIM

MIN

MAX

.625

.560

.380

.140

.420

.190

---

Vdc

MHz

3.56

4.82

.020

.139

.190

---

.045

.161

.110

.250

.025

0.51

3.53

2.29

---

1.14

4.09

2.79

6.35

0.64

f_T

Transistor Frequency

---

(I_C=500mAdc, V_CE=5Vdc)

Collector Output Capacitance

(V_CB=10Vdc, I_E=0, f=1MHz)

C_ob

.012

0.30

.500

.045

.580

.060

12.70

1.14

14.73

1.52

t_on

t_s

t_f

Turn on time

Storage time

Fall time

---

0.8

1.5

0.8

---

I_B1=-I_B2=0.2A, I_C=2A,

V_CC=30V, PW=20us

.190

.210

4.83

5.33

.100

.080

.045

.230

-----

.135

.115

.055

.270

.050

-----

2.54

2.04

1.14

5.84

-----

3.43

2.92

1.39

6.86

1.27

-----

Classification OF h^FE(1)

Rank

Range

150-300

60-120

100-200

.045

1.15

Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.

www.mccsemi.com

1 of 2

Revision: A

2011/01/01

中文翻译

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与2SD880P相关器件

型号	品牌	获取价格	描述	数据表
2SD880Q	MCC	获取价格	3A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, PLASTIC, TO-220, 3 PIN
2SD880-Q	MCC	获取价格	NPN Silicon Power Transistors
2SD880-Q-B	MCC	获取价格	Transistor
2SD880-Q-BP	MCC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD880-Q-BP-HF	MCC	获取价格	Power Bipolar Transistor,
2SD880QP	MCC	获取价格	暂无描述
2SD880Y	UTC	获取价格	Transistor
2SD880Y	CDIL	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD880Y	TOSHIBA	获取价格	TRANSISTOR 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB, BIP General Purpose Power
2SD880Y	USHA	获取价格	SILICON PLASTIC POWER TRANSISTOR

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