2SD882

更新时间： 2024-11-18 07:31:55

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
5页	689K
描述
PNP / NPN Epitaxial Planar Transistors

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中文翻译

获取价格

数据手册

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2SD882 数据手册

2SB772

2SD882

PNP / NPN Epitaxial Planar Transistors

TO-126

1.EMITTER

2.COLLECTOR

3.BASE

P b

Lead(Pb)-Free

ABSOLUTE MAXIMUM RATINGS (T =25°C)

Rating

Symbol

PNP/2SB772

Unit

NPN/2SD882

-30

Vdc

Collector-Emitter Voltage

CEO

-40

-5.0

-3.0

-7.0

5.0

3.0

7.0

Vdc

Adc

Collector-Base Voltage

Emitter-Base Voltage

CBO

EBO

Collector Current(DC)

Collector Current(Pulse)⁽¹⁾

Base Current

C(DC)

C(Pulse)

B(Pulse)

-0.6

0.6

1.0

Total Cevice Disspation Ta=25°C

Total Cevice Disspation Tc=25°C

Junction Temperature

Storage, Temperture

150

-55 to +150

°C

Tstg

°C

Device Marking

2SB772=B772 , 2SD882=D882

ELECTORICAL CHARACTERISTICS

Characteristics

Symbol

Min

Max

Unit

-30/30

Vdc

Collect-Emitter Breakdown Voltage (I =-10/10 mAdc, I =0)

(BR)CEO

(BR)CBO

Collect-Base Breakdown Voltage (I =-100/100 µAdc, I =0)

-40/40

Emitter-Base Breakdown Voltage (I =-100/100 µAdc, I =0)

-5.0/5.0

Vdc

(BR)EBO

Collector Cutoff Current (V =-30/30 Vdc, I =0)

-1.0/1.0

µAdc

CEO

Collector Cutoff Current (V =-40/40 Vdc, I =0)

CBO

Emitter Cutoff Current (V =-6.0/6.0Vdc, I =0)

EBO

NOTE: 1.PW ≤ 350us, duty cycle ≤ 2%

WEITRON

http://www.weitron.com.tw

1/5

Rev.B 14-Aug-07

12 3 4 5

中文翻译

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