Datasheet > 2SD880OL

2SD880OL

更新时间： 2024-11-21 05:19:27

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
3页	116K
描述
Transistor

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2SD880OL 数据手册

UTC2SD880

NPNEPITAXIAL PLANAR TRANSISTOR

NPN EPITAXIAL TRANSISTOR

DESCRIPTION

The UTC 2SD880 is designed for audio frequency power

amplifier applications.

FEATURE

*High DC Current Gain:

hFE=300(Max.)(VCE=5V,IC=0.5A)

*Low Saturation Voltage:

VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)

*High Power Dissipation:

PC=30W (Ta=25°C)

*Complementary to 2SB834

TO-220

1:BASE 2:COLLECTOR 3:EMITTER

*Pb-free plating product number: 2SD880L

ABSOLUTE MAXIMUM RATINGS ^(Ta=25°C)

PARAMETER

Maximum Voltages and currents

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

SYMBOL

VALUE

UNIT

VCBO

VCEO

VEBO

0.5

Base Current

Maximum Power Dissipation

Total Power Dissipation

Maximum Temperature

Junction Temperature Range

Storage Temperature Range

TOPR

TSTG

150

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS(Ta=25°C)

PARAMETER

Collector-Emitter Breakdown Voltage

Collector Cut-Off Current

SYMBOL

BVCEO

ICBO

TEST CONDITIONS

MIN. TYP. MAX. UNIT

IC=50mA,IE=0

VCB=60V,IE=0

µA

100

Emitter Cut-Off Current

IEBO

VEB=7V,IC=0

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Gain

VCE(SAT)

VBE(ON)

hFE

IC=3A, IB=300mA

VCE=5V, IC=500mA

IC=500mA, VCE=5V

VCE =5V, IC =500mA

300

Current gain bandwidth product

MHZ

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R203-013,B

12 3

中文翻译

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