5秒后页面跳转
2SD880G-AB3-R PDF预览

2SD880G-AB3-R

更新时间: 2024-09-28 01:19:27
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
4页 184K
描述
NPN EPITAXIAL TRANSISTOR

2SD880G-AB3-R 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.64
最大集电极电流 (IC):3 A配置:Single
最小直流电流增益 (hFE):100最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):3 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

2SD880G-AB3-R 数据手册

 浏览型号2SD880G-AB3-R的Datasheet PDF文件第2页浏览型号2SD880G-AB3-R的Datasheet PDF文件第3页浏览型号2SD880G-AB3-R的Datasheet PDF文件第4页 
UNISONIC TECHNOLOGIES CO., LTD  
2SD880  
NPN SILICON TRANSISTOR  
NPN EPITAXIAL TRANSISTOR  
DESCRIPTION  
The UTC 2SD880 is designed for audio frequency power  
amplifier applications.  
FEATURES  
* High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A)  
* Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)  
* Complementary to 2SB834  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
2SD880G-AB3-R  
2SD880G-TA3-T  
1
B
B
2
C
C
3
E
E
-
SOT-89  
TO-220  
Tube  
Tube  
2SD880L-TA3-T  
Note: Pin Assignment: B: Base C: Collector  
E: Emitter  
MARKING  
SOT-89  
TO-220  
www.unisonic.com.tw  
Copyright © 2015 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R203-013.G  

与2SD880G-AB3-R相关器件

型号 品牌 获取价格 描述 数据表
2SD880GR TOSHIBA

获取价格

TRANSISTOR 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB, BIP General Purpose Power
2SD880GR TRSYS

获取价格

Transistor
2SD880GR CDIL

获取价格

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD880-GR MCC

获取价格

NPN Silicon Power Transistors
2SD880GR(TO-220) CJ

获取价格

Transistor
2SD880-GR-BP MCC

获取价格

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD880-GR-BP-HF MCC

获取价格

Power Bipolar Transistor,
2SD880GRL TRSYS

获取价格

暂无描述
2SD880GRP MCC

获取价格

TRANSISTOR 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB, PLASTIC, TO-220, 3 PIN, BIP Gen
2SD880G-TA3-T UTC

获取价格

NPN EPITAXIAL TRANSISTOR