2SD880GRL

更新时间： 2024-11-18 13:04:23

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TRSYS		晶体晶体管
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中文翻译

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数据手册

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2SD880GRL 数据手册

Transys

Electronics

I M I T E D

TO-220 Plastic-Encapsulated Transistors

2SD880 TRANSISTOR (NPN)

TO—220

1. BASE

FEATURES

Power dissipation

2. COLLECTOR

3. EMITTER

P_CM:

1.5 W (Tamb=25℃)

Collector current

I_CM:

1 2 3

Collector-base voltage

V_(BR)CBO

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test conditions

MIN

TYP

MAX

UNIT

Ic=100µA, I_E=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Ic=50mA, I_B=0

I_E= 100µA, I_C=0

V_CB=60V, I_E=0

100

300

µA

I_EBO

V_EB=7V, I_C=0

h_FE

V_CE=5V, I_C=500mA

I_C=3A, I_B=300mA

I_C=0.5A, V_CE= 5V

V_CE=5 V, I_C=500mA

V_CE=10V, I_E=0, f=1MHz

V_CE(sat)

V_BE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition Frequency

f _T

MHz

µs

Collector output capacitance

Turn on time

C_ob

t_on

0.8

1.5

0.8

I_B1=-I_B2=0.2A, I_C=2A

t _s

µs

Storage time

V_CC=30V, PW=20µs

t _f

µs

Fall time

CLASSIFICATION OF h_FE

Rank

60-120

100-200

150-300

Range

中文翻译

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